absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter con dition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz, gate open 800 v i t(rms) r.m.s on-state current t c = 95 c, full sine wave 4.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 30/33 a i 2 t i 2 t for fusing tp = 10ms 4.5 a 2 s p gm peak gate power dissipation t c = 95 c, pulse width 1.0 us 3w p g(av) average gate power dissipation over any 20ms period 0.3 w i gm peak gate current tp = 20us, t j =125c 1.0 a v gm peak gate voltage tp = 20us, t j =125c 7.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 0.26 g mar, 2008. rev. 5 features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 4 a ) high commutation dv/dt general description this device is new surface mounted package line up suitable for space limited application such as low power ac switching applications, such as fan speed, small light controllers and home appliance equipment. 1/6 STR4A80 semiwell semiconductor 2.t2 3.gate 1.t1 symbol to-126 3 2 1 bi-directional triode thyristor copyright@semiwell semi conductor co., ltd., all rights reserved.
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 5.5a, inst. measurement 1.65 v i + gt1 gate trigger current v d = 6 v, r l =10 20 ma i - gt1 20 i - gt3 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -2.0 a/ms, v d =2/3 v drm 5.0 v/ ? i h holding current 5.0 ma r th(j-c) thermal impedance junction to case 3.5 c/w STR4A80 2/6 notes : 1. pulse width 300us , duty cycle 2%
10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) 25 i gm (1a) p g (av) (0.3w) p gm (3w) v gm (7v) gate voltage [v] gate current [ma] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 95 100 105 110 115 120 125 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] -50 0 50 100 150 0.1 1 10 v gt (t o c) v + gt1 v _ gt1 v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 5 10 15 20 25 30 35 60hz 50hz surge on-state current [a] time (cycles) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 -1 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] STR4A80 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle
-50 0 50 100 150 0.1 1 10 i + gt1 i _ gt1 i _ gt3 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 STR4A80 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 STR4A80 to-126 package dimension 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l 5/6
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 m 5.0 0.197 3.2 0.126 STR4A80 to-126 package dimension, forming 6/6 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l m
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